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ON Semiconductort
Dual Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. * Extremely Fast Switching Speed * Low Forward Voltage -- 0.35 V @ IF = 10 mAdc
MBD54DWT1
ON Semiconductor Preferred Device
30 VOLTS DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF 150 1.2 IF TJ Tstg 200 Max 125 Max -55 to +150 mW mW/C mA C C N/C 2 Cathode 3 Anode 1 Value 30 Unit Volts
1 2 3
6
5
4
CASE 419B-01, STYLE 6 SOT-363
6 Cathode 5 N/C 4 Anode
DEVICE MARKING
MBD54DWT1 = BL
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (t < 1.0 s) Symbol V(BR)R CT IR VF VF VF trr VF VF IF IFRM IFSM Min 30 -- -- -- -- -- -- -- -- -- -- -- Typ -- 7.6 0.5 0.22 0.41 0.52 -- 0.29 0.35 -- -- -- Max -- 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40 200 300 600 Unit Volts pF Adc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
November, 2001 - Rev. 5
Publication Order Number: MBD54DWT1/D
MBD54DWT1
820 +10 V 2k 100 H 0.1 F DUT IF 0.1 F tr 10% tp t IF trr t
50 OUTPUT PULSE GENERATOR
50 INPUT SAMPLING OSCILLOSCOPE
90% VR IR INPUT SIGNAL
iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 1000 100 10 1.0 0.1 0.01 0.001 TA = 25C 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30 TA = 85C TA = 125C
TA = 150C
10
150C
1.0
125C 85C 25C
-40C 0.3
-55C 0.4 0.5 0.6
0.1 0.0
0.1
0.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
14 C T , TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20
Figure 3. Leakage Current
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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MBD54DWT1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.5 mm (min)
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
1.9 mm
SOT-363 SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts.
PD = 150C - 25C 833C/W = 150 milliwatts
The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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0.4 mm (min)
0.65 mm 0.65 mm
MBD54DWT1
PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-01 ISSUE G
A G V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
6
5
4
S
1 2 3
-B-
DIM A B C D G H J K N S V
D 6 PL
0.2 (0.008) N
M
B
M
INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016
MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40
J C
H
K
STYLE 6: PIN 1. 2. 3. 4. 5. 6. ANODE 2 N/C CATHODE 1 ANODE 1 N/C CATHODE 2
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MBD54DWT1/D

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